C- and L-Band Single Angled Facet Gain Chips


  • InP Gain Chip on Submount or Submount with Heatsink
  • Ultra-Low Reflectance at Angled Facet
  • Custom Coatings Available

Actual Size Compared
to US One Cent Coin

SAF1118C

Chip on Submount

SAF1126H

Chip on Submount
with Heatsink

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Features

  • Broad Tuning Range
  • High Output Power
  • Ultra-Low Angled Facet Reflectance: 0.005% (Typ)
  • Gain Medium for Narrow Linewidth Fiber Bragg Grating Lasers
  • Gain Medium for Widely Tunable External Cavity Semiconductor Lasers

Single Angled Facet (SAF) gain chips use a geometric technique to further reduce the reflection on one end of the chip by curving the ridge waveguide so that it is not normally incident to the chip facet. This, in combination with an AR coating on that facet, virtually eliminates back reflections that can create unwanted feedback into the laser cavity. As a result, SAF gain chips are superior to standard gain chips when used in Extended Cavity Lasers (ECLs), particularly tunable ECLs, since any residual reflection from the AR-coated Fabry-Perot (FP) gain chip facet often limits the stability, output power, and spectral quality of the laser.

Our C-band and L-Band SAF gain chips are each available in two configurations. The SAF1126C and SAF1118C feature our C-band chip and L-band chip, respectively, on a submount, while the SAF1126H and SAF1118H feature the same C-band chip and L-band chip, respectively, on the same submount with an added heatsink and connected cathode and anode leads.

The SAF1126C C-Band chip and SAF1118C L-band chip are offered on a submount, while the SAF1126H C-band chip and SAF1118H L-band chip are provided on the same submount with a heatsink and connected cathode and anode leads.

SAF1126C C-Band SAF Gain Chip

Parameter* Min Typ Max
Operating Current - 300 mA 350 mA
Operating Wavelength Range 1528 nm - 1568 nm
Threshold Current - 60 mA 75 mA
Output Power over Band 40 mW 60 mW -
Side-Mode Suppression Ratio - 50 dB -
Angled Facet Reflectivity - 0.005% 0.01%
Normal Facet Reflectivity - 10% -
Forward Voltage - 1.3 V 1.8 V
Chip Length - 1.0 mm -
Waveguide Refractive Index - 3.2 -
Lateral Beam Exit Angle - 19.5o -
Transverse Beam
Divergence (FWHM)
26o 30o 34o
Lateral Beam
Divergence (FWHM)
- 16o -

*Specifications based on a Littrow external cavity configuration, external cavity losses that are <5 dB CW, and a chip temperature of 25 oC.

SAF1118C L-Band SAF Gain Chip

Parameter Min Typ Max
Operating Current - 300 mA 350 mA
Operating Wavelength Range 1568 nm - 1608 nm
Threshold Current - 60 mA 75 mA
Output Power over Band 40 mW 60 mW -
Side-Mode Suppression Ratio - 50 dB -
Angled Facet Reflectivity - 0.005% 0.01%
Normal Facet Reflectivity - 10% -
Forward Voltage - 1.3 V 1.8 V
Chip Length - 1.0 mm -
Waveguide Refractive Index - 3.2 -
Lateral Beam Exit Angle - 19.5o -
Transverse Beam
Divergence (FWHM)
26o 30o 34o
Lateral Beam
Divergence (FWHM)
- 16o -

*Specifications based on a Littrow external cavity configuration, external cavity losses that are <5 dB CW, and a chip temperature of 25 oC.

SAF1126 Performance

SAF1126C Power and Voltage Performance

SAF1118 Performance

SAF1118 Performance

SAF1118 and SAF1126 ASE Performance

SAF, Gain Chip
Click to Enlarge

Diagram of the Anode and Cathode Pins of the SAF1126C and SAF1118C
SAF, Gain Chip
Click to Enlarge

Diagram of the Anode and Cathode Pins of the SAF1126H and SAF1118H

Posted Comments:
Haiyang Yu  (posted 2019-12-27 09:44:25.003)
请问这款芯片的线宽展宽因子估计是多少?
YLohia  (posted 2019-12-27 08:31:37.0)
Thank you for contacting Thorlabs. Our Tech Support team in China can be reached via email at techsupport-cn@thorlabs.com. We will reach out to you directly.

C-Band (λc=1550 nm) SAF Gain Chips

Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
SAF1126C Support Documentation
SAF1126CC-Band Single Angle Facet Gain Chip on Submount
$743.03
Today
SAF1126H Support Documentation
SAF1126HC-Band Single Angle Facet Gain Chip on Submount with Heatsink
$743.03
Today

L-Band (λc=1590 nm) SAF Gain Chips

Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
SAF1118C Support Documentation
SAF1118CL-Band Single Angle Facet Gain Chip on Submount
$743.03
Today
SAF1118H Support Documentation
SAF1118HL-Band Single Angle Facet Gain Chip on Submount with Heatsink
$743.03
Today